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HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching Preliminary Data Sheet IXGH 40N60B2D1 IXGT 40N60B2D1 VCES IC25 VCE(sat) tfi typ = 600 V = 75 A < 1.7 V = 82 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C (limited by leads) TC = 110C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 10 Clamped inductive load @ 600 V TC = 25C Maximum Ratings 600 600 20 30 75 40 200 ICM = 80 300 -55 ... +150 150 -55 ... +150 300 V V V V A A A A TO-268 (IXGT) G E C (TAB) TO-247 AD (IXGH) C (TAB) G C E C = Collector, TAB = Collector W C C C C Features G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268 SMD 1.13/10 Nm/lb.in. 6 4 g g Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 3.0 TJ = 25C TJ = 150C 5.0 50 1 100 TJ = 25C 1.7 V A mA nA V VGE(th) ICES IGES VCE(sat) IC = 250 A, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = 30 A, VGE = 15 V (c) 2003 IXYS All rights reserved DS99109(10/03) IXGH 40N60B2D1 IXGT 40N60B2D1 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 20 36 2560 VCE = 25 V, VGE = 0 V, f = 1 MHz 210 54 100 IC = 30 A, VGE = 15 V, VCE = 300 V 15 36 18 Inductive load, TJ = 25C IC = 30 A, VGE = 15 V VCE = 400 V, RG = 3.3 20 130 82 0.4 18 Inductive load, TJ = 125C IC = 30 A, VGE = 15 V VCE = 400 V, RG = 3.3 20 0.3 240 150 1.10 200 150 S P TO-247 AD Outline gfs Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = 30 A; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % pF pF pF nC nC nC ns ns ns ns e Dim. 0.8 mJ ns ns mJ ns ns mJ 0.42 K/W Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 Outline (TO-247) 0.25 K/W Reverse Diode (FRED) Symbol VF IRM t rr RthJC Min. Recommended Footprint Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. TJ =150C 1.6 2.5 4 V V A ns ns IF = 30 A, VGE = 0 V, Pulse test t 300 s, duty cycle d 2 % IF = 30 A, VGE = 0 V, -diF/dt =100 A/s, TJ = 100C VR = 100 V TJ = 100C 100 IF = 1 A; -di/dt = 100 A/s; VR = 30 V 25 0.9 K/W IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGH 40N60B2D1 IXGT 40N60B2D1 Fig. 1. Output Characte ristics @ 25 Deg. C 60 50 40 30 20 10 5V 0 0.5 1 1.5 2 2.5 3 VGE = 15V 13V 11V 210 9V 180 150 Fig. 2. Extended Output Characte ristics @ 25 de g. C VGE = 15V 13V 11V I C - Amperes I C - Amperes 7V 9V 120 90 60 30 5V 0 0 1 2 3 4 5 6 7 7V V C E - Volts Fig. 3. Output Characteristics @ 125 Deg. C 60 50 40 30 20 10 0 0.5 1 1.5 2 2.5 3 VGE = 15V 13V 11V 1.4 9V 1.3 V C E - Volts Fig. 4. De pende nce of V CE(sat) on Tem perature V GE = 15V I C = 60A I C - Amperes 7V V C E (sat)- Normalized 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 I C = 30A 5V I C = 15A 100 125 150 V CE - Volts Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage 4 TJ = 25C 3.5 3 I C = 60A 30A 15A 150 120 90 60 30 0 5 6 7 8 9 10 11 12 13 14 15 16 17 3 4 180 TJ - Degrees Centigrade Fig. 6. Input Adm ittance 2.5 2 1.5 1 I C - Amperes VC E - Volts TJ = 125C 25C -40C 5 6 7 8 9 10 V G E - Volts (c) 2003 IXYS All rights reserved V G E - Volts IXGH 40N60B2D1 IXGT 40N60B2D1 Fig. 7. Transconductance 60 50 TJ = -40C 25C 125C 3 2.7 2.4 I C = 60A TJ = 125C VGE = 15V VCE = 400V Fig. 8. Dependence of Turn-Off Energy on RG E off - milliJoules g f s - Siemens 40 30 20 2.1 1.8 1.5 1.2 0.9 I C = 30A 10 0 0 30 60 90 120 150 180 0.6 0.3 3 6 9 12 15 18 I C = 15A 21 24 27 30 I C - Amperes Fig. 9. Dependence of Turn-Off Energy on Ic 2.7 2.4 2.1 R G = 3.3 VGE = 15V VCE = 400V 2.7 2.4 2.1 R G = 3.3 VGE = 15V VCE = 400V R G - Ohms Fig. 10. Dependence of Turn-Off Energy on Tem perature I C = 60A E off - MilliJoules E off - milliJoules 1.8 1.5 1.2 0.9 0.6 0.3 0 15 20 25 30 35 40 45 50 55 60 TJ = 25C TJ = 125C 1.8 1.5 1.2 0.9 0.6 0.3 0 25 35 45 55 65 75 85 95 105 115 125 I C = 15A I C = 30A I C - Amperes Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG 600 550 300 TJ - Degrees Centigrade Fig. 12. Dependence of Turn-Off Sw itching Tim e on Ic 275 Switching Time - nanosecond Switching Time - nanosecond 500 450 400 350 300 250 200 150 100 3 td(off) tfi - - - - - TJ = 125C VGE = 15V VCE = 400V td(off) tfi - - - - - R G = 3.3 VGE = 15V VCE = 400V TJ = 125C 250 225 200 175 150 125 100 75 TJ = 25C I C = 15A I C = 60A I C = 30A 6 9 12 15 18 21 24 27 30 15 20 25 30 35 40 45 50 55 60 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: R G - Ohms I C - Amperes 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 IXGH 40N60B2 IXGT 40N60B2 Fig. 13. Dependence of Turn-Off Sw itching Tim e on Te m perature 275 250 225 200 175 150 125 100 75 25 35 45 0 I C = 60A I C = 30A 15 Fig. 14. Gate Charge VCE = 300V I C = 30A I G = 10mA Switching Time - nanosecond td(off) tfi - - - - - R G = 3.3 VGE = 15V VCE = 400V 12 I C = 15A VG E - Volts 9 6 3 TJ - Degrees Centigrade 55 65 75 85 95 105 115 125 0 10 20 30 40 50 60 70 80 90 100 Q G - nanoCoulombs Fig. 15. Capacitance 10000 f = 1 MHz Capacitance - p F 1000 C ies C oes 100 C res 10 0 5 10 15 V C E - Volts 20 25 30 35 40 Fig. 16. Maxim um Trans ient Therm al Res istance 0.45 0.4 0.35 R (th) J C - (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 1 10 Pulse Width - milliseconds 100 1000 (c) 2003 IXYS All rights reserved IXGH 40N60B2D1 IXGT 40N60B2D1 60 A 50 IF 40 1000 TVJ= 100C nC VR = 300V IF= 60A IF= 30A IF= 15A IRM 30 A 25 20 15 TVJ= 100C VR = 300V IF= 60A IF= 30A IF= 15A 800 Qr TVJ=150C 30 20 600 TVJ=100C TVJ=25C 400 10 200 5 0 10 0 0 1 2 VF 3V 0 100 A/s 1000 -diF/dt 0 200 400 600 A/s 1000 800 -diF/dt Fig. 17. Forward current IF versus VF Fig. 18. Reverse recovery charge Qr versus -diF/dt 90 ns Fig. 19. Peak reverse current IRM versus -diF/dt 20 V VFR 15 2.0 TVJ= 100C VR = 300V TVJ= 100C IF = 30A VFR tfr 1.00 tfr 0.75 s 1.5 Kf 1.0 trr 80 IRM 70 0.5 IF= 60A IF= 30A IF= 15A 10 0.50 Qr 5 0.25 0.0 0 40 80 120 C 160 TVJ 60 0 200 400 600 -diF/dt 800 A/s 1000 0 0 200 400 0.00 600 A/s 1000 800 diF/dt Fig. 20. Dynamic parameters Qr, IRM versus TVJ 1 K/W Fig. 21. Recovery time trr versus -diF/dt Fig. 22. Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i Rthi (K/W) 0.502 0.193 0.205 ti (s) 0.0052 0.0003 0.0162 0.1 ZthJC 1 2 3 0.01 0.001 0.00001 DSEP 29-06 0.0001 0.001 0.01 0.1 s t 1 Fig. 23. Transient thermal resistance junction to case IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 |
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